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MBR200100CT - Schottky Power Diode

Download the MBR200100CT datasheet PDF. This datasheet also covers the MBR20045CT variant, as both devices belong to the same schottky power diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20045CT thru MBR200100CTR Silicon Schottky Diode, 200A TWIN TOWER.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR20045CT_NainaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBR200100CT
Manufacturer Naina Semiconductor
File Size 184.85 KB
Description Schottky Power Diode
Datasheet download datasheet MBR200100CT Datasheet

📁 Similar Datasheet

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Other Datasheets by Naina Semiconductor

Part Number Description
MBR200100CTR Schottky Power Diode
MBR20020CT (MBR20020CT - MBR20040CTR) Schottky Power Diode
MBR20020CTR (MBR20020CT - MBR20040CTR) Schottky Power Diode
MBR20030CT (MBR20020CT - MBR20040CTR) Schottky Power Diode
MBR20030CTR (MBR20020CT - MBR20040CTR) Schottky Power Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20045CT thru MBR200100CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 135 oC TC = 25 oC tp = 8.3 ms Conditions MBR20045CT (R) 45 32 45 200 MBR20060CT MBR20080CT (R) (R) 60 42 60 200 80 56 80 200 MBR200100C T(R) 100 70 100 200 Units V V V A IFSM 1500 http://www.DataSheet4U.