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MBR20030CTR - (MBR20020CT - MBR20040CTR) Schottky Power Diode

Download the MBR20030CTR datasheet PDF. This datasheet also covers the MBR20020CT variant, as both devices belong to the same (mbr20020ct - mbr20040ctr) schottky power diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A TWIN TOWER.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR20020CT_NainaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBR20030CTR
Manufacturer Naina Semiconductor
File Size 184.15 KB
Description (MBR20020CT - MBR20040CTR) Schottky Power Diode
Datasheet download datasheet MBR20030CTR Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20020CT thru MBR20040CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 135 oC TC = 25 oC tp = 8.3 ms Conditions MBR20020CT (R) 20 14 20 200 MBR20030CT MBR20035CT (R) (R) 30 21 30 200 35 25 35 200 MBR20040CT (R) 40 28 40 200 Units V V V A IFSM 1500 http://www.DataSheet4U.