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MBR20045CT - (MBR20045CT - MBR200100CTR) Schottky Power Diode

Key Features

  • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20045CT thru MBR200100CTR Silicon Schottky Diode, 200A TWIN TOWER.

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Datasheet Details

Part number MBR20045CT
Manufacturer Naina Semiconductor
File Size 184.85 KB
Description (MBR20045CT - MBR200100CTR) Schottky Power Diode
Datasheet download datasheet MBR20045CT Datasheet

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Other Datasheets by Naina Semiconductor

Part Number Description
MBR20045CTR Schottky Power Diode
MBR20040CT (MBR20020CT - MBR20040CTR) Schottky Power Diode
MBR20040CTR (MBR20020CT - MBR20040CTR) Schottky Power Diode
MBR200100CT Schottky Power Diode
MBR200100CTR Schottky Power Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20045CT thru MBR200100CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 135 oC TC = 25 oC tp = 8.3 ms Conditions MBR20045CT (R) 45 32 45 200 MBR20060CT MBR20080CT (R) (R) 60 42 60 200 80 56 80 200 MBR200100C T(R) 100 70 100 200 Units V V V A IFSM 1500 http://www.DataSheet4U.