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MBR20060CTR - Schottky Power Diode

This page provides the datasheet information for the MBR20060CTR, a member of the MBR20045CT Schottky Power Diode family.

Datasheet Summary

Features

  • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20045CT thru MBR200100CTR Silicon Schottky Diode, 200A TWIN TOWER.

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Datasheet preview – MBR20060CTR

Datasheet Details

Part number MBR20060CTR
Manufacturer Naina Semiconductor
File Size 184.85 KB
Description Schottky Power Diode
Datasheet download datasheet MBR20060CTR Datasheet
Additional preview pages of the MBR20060CTR datasheet.

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Other Datasheets by Naina Semiconductor
  • MBR20060CT - (MBR20045CT - MBR200100CTR) Schottky Power Diode
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Full PDF Text Transcription

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Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR20045CT thru MBR200100CTR Silicon Schottky Diode, 200A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 135 oC TC = 25 oC tp = 8.3 ms Conditions MBR20045CT (R) 45 32 45 200 MBR20060CT MBR20080CT (R) (R) 60 42 60 200 80 56 80 200 MBR200100C T(R) 100 70 100 200 Units V V V A IFSM 1500 http://www.DataSheet4U.
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