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Naina Semiconductor Ltd.
Features
• • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR30045CT thru MBR300100CTR
Silicon Schottky Diode, 300A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 140 oC TC = 25 oC tp = 8.3 ms Conditions MBR30045CT (R) 45 32 45 300 MBR30060CT MBR30080CT (R) (R) 60 42 60 300 80 56 80 300 MBR300100C T(R) 100 70 100 300 Units V V V A
IFSM
2500
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MBR30080CT Datasheet
