Naina Semiconductor MBR3545
Schottky Power Diode
| Part No. | MBR3545 |
|---|---|
| Datasheet | MBR3545 Download |
| Manufacturer |  Naina Semiconductor |
| Description | Schottky Power Diode |
| Buy | Stock & Price |
FEATURES
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● Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity MBR3545 thru MBR35100R DO-203AA (DO-4)
MAXIMUM RATINGS
(TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage TC ≤ 110 C TC = 25oC IF = 35 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC o VRRM VRMS VDC IF IFSM VF 45 32 45 35 600 60 42 60 35 600 0.75 1.5 25 80 57 80 35 600 0.84 1.5 25 100 70 100 35 600 0.84 1.5 V V V A A V 0.68 1.5 Reverse current IR 25 25 mA Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted) Parameters Symbol MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit o Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque...