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Naina Semiconductor Ltd.
Schottky Power Diode, 35A
Features
• • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity
MBR3545 thru MBR35100R
DO-203AA (DO-4)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter Test Conditions Symbol MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage TC ≤ 110 C TC = 25oC IF = 35 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC
o
VRRM VRMS VDC IF IFSM VF
45 32 45 35 600
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60 42 60 35 600 0.75 1.5 25
80 57 80 35 600 0.84 1.5 25
100 70 100 35 600 0.84 1.5
V V V A A V
0.68 1.
MBR3580 Datasheet
