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MBR400100CT - Schottky Power Diode

Download the MBR400100CT datasheet PDF. This datasheet also covers the MBR40045CT variant, as both devices belong to the same schottky power diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR40045CT thru MBR400100CTR Silicon Schottky Diode, 400A TWIN TOWER.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR40045CT_NainaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBR400100CT
Manufacturer Naina Semiconductor
File Size 184.93 KB
Description Schottky Power Diode
Datasheet download datasheet MBR400100CT Datasheet

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Other Datasheets by Naina Semiconductor

Part Number Description
MBR400100CTR Schottky Power Diode
MBR40020CT Schottky Power Diode
MBR40020CTR Schottky Power Diode
MBR40030CT Schottky Power Diode
MBR40030CTR Schottky Power Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR40045CT thru MBR400100CTR Silicon Schottky Diode, 400A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 125 oC TC = 25 oC tp = 8.3 ms Conditions MBR40045CT (R) 45 32 45 400 MBR40060CT MBR40080CT (R) (R) 60 42 60 400 80 56 80 400 MBR400100C T(R) 100 70 100 400 Units V V V A IFSM 3000 http://www.DataSheet4U.