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Naina Semiconductor Ltd.
Features
• • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR40045CT thru MBR400100CTR
Silicon Schottky Diode, 400A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 125 oC TC = 25 oC tp = 8.3 ms Conditions MBR40045CT (R) 45 32 45 400 MBR40060CT MBR40080CT (R) (R) 60 42 60 400 80 56 80 400 MBR400100C T(R) 100 70 100 400 Units V V V A
IFSM
3000
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MBR40045CT Datasheet
