MBR40060CTR
Features
- -
- - Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR40045CT thru MBR400100CTR
Silicon Schottky Diode, 400A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25o C unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 125 o C TC = 25 o C tp = 8.3 ms Conditions MBR40045CT (R) 45 32 45 400 MBR40060CT MBR40080CT (R) (R) 60 42 60 400 80 56 80 400 MBR400100C T(R) 100 70 100 400 Units V V V A
IFSM
3000 http://..net/
Electrical Characteristics (TJ = 25o C unless otherwise specified) Parameter DC forward voltage Symbol VF Conditions IF = 200 A TJ = 25 o C VR = 20 V TJ = 25 o C VR = 20 V TJ = 125o C MBR40045CT (R) 0.68 5 200 MBR40060CT (R) 0.68 5 200 MBR40080CT (R) 0.68 5 200 MBR400100C T(R) 0.68 5 m A 200 Units V
DC reverse current
Thermal Characteristics...
