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MBR40080CT - Schottky Power Diode

This page provides the datasheet information for the MBR40080CT, a member of the MBR40045CT Schottky Power Diode family.

Datasheet Summary

Features

  • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR40045CT thru MBR400100CTR Silicon Schottky Diode, 400A TWIN TOWER.

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Datasheet preview – MBR40080CT

Datasheet Details

Part number MBR40080CT
Manufacturer Naina Semiconductor
File Size 184.93 KB
Description Schottky Power Diode
Datasheet download datasheet MBR40080CT Datasheet
Additional preview pages of the MBR40080CT datasheet.

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Full PDF Text Transcription

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Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR40045CT thru MBR400100CTR Silicon Schottky Diode, 400A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 125 oC TC = 25 oC tp = 8.3 ms Conditions MBR40045CT (R) 45 32 45 400 MBR40060CT MBR40080CT (R) (R) 60 42 60 400 80 56 80 400 MBR400100C T(R) 100 70 100 400 Units V V V A IFSM 3000 http://www.DataSheet4U.
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