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Naina Semiconductor Ltd.
Features
• • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR50020CT thru MBR50040CTR
Silicon Schottky Diode, 500A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 100 oC TC = 25 oC tp = 8.3 ms Conditions MBR50020CT (R) 20 14 20 500 MBR50030CT MBR50035CT (R) (R) 30 21 30 500 35 25 35 500 MBR50040CT (R) 40 28 40 500 Units V V V A
IFSM
3500
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MBR50020CT Datasheet
