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Naina Semiconductor Ltd.
Schottky Power Diode, 80A
Features
• • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity
MBR8045 thru MBR80100R
DO-203AB (DO-5)
Maximum Ratings (TJ = 25oC, unless otherwise noted)
Parameter Test Conditions Symbol MBR8045(R) MBR8060(R) MBR8080(R) MBR80100(R) Unit
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage TC ≤ 120 C TC = 25oC IF = 80 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC
o
VRRM VRMS VDC IF IFSM VF
45 32 45 80 1000
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60 42 60 80 1000 0.75 5 250
80 57 80 80 1000 0.84 5 250
100 70 100 80 1000 0.84 5
V V V A A V
0.
MBR8060 Datasheet
