Datasheet Summary
Naina Semiconductor Ltd.
MUR10040CT thru MUR10060CTR
Features
Super Fast Recovery Diode, 100A
- Dual Diode Construction
- Low Leakage Current
- Low forward voltage drop
- High surge current capability
- Super Fast Switching
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified)
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
RMS reverse voltage
VRMS
DC blocking voltage
Average forward current
IF(AV)
Non-repetitive forward surge current, half sinewave
IFSM
Conditions
TC ≤ 140 oC TC = 25 oC
MUR10040CT(R) 400 280 400 100
MUR10060CT(R) 600 420 600 100
Units V V V A
Electrical Characteristics (TJ = 25oC unless otherwise...
