PWB130A40 Datasheet | Naina Semiconductor

Features - Low voltage three-phase - High surge current capability - Easy construction - Non-isolated - Mounting base as mon anode Voltage Ratings (TC = 25OC unless otherwise specified) Parameter Symbol PWB130A30 PWB130A40 Maximum repetitive peak reverse voltage VRRM Maximum non-repetitive peak reverse voltage VRSM Maximum repetitive peak off-state voltage VDRM Units V V V Electrical Characteristics (TC = 25OC unless otherwise specified) Parameter Average on-state current R.M.S. on-state current Conditions Single phase, half-wave, 1800 conduction @ TC = 1120C On-state surge current I2t required for fusing half cycle, 50Hz/60Hz, peak value, non-repetitive Peak gate power dissipation Average gate power dissipation Peak gate current Peak gate voltage (forward) Peak gate voltage (reverse) Critical rate of rise of on-state current Critical rate of rise of off-state voltage Holding current Peak on-state voltage Repetitive Peak Reverse Current Gate Trigger Current Gate Trigger Voltage IG = 200m A, VD = ½ VDRM , d IG/dt = 1 A/µs, TJ=250C TJ = 1500C, VD = 2/3 VDRM , exponential wave TJ=250C TJ=250C TJ=1500C, single phase, half wave TJ = 25OC, IT = 1A, VD=6V TJ = 25OC, IT = 1A, VD=6V Symbol IT(AV) IT(RMS) ITSM I2t PGM PGM(AV) IGM VFGM VRGM di/dt dv/dt IH VTM IRRM IGT VGT Values 130...