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r---------------------------------------I I I IN 5831 I NAINA I I I I 25 AMPERE 40 VOLTS I SwitchmodePowerRectifier. 7" I I I
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Low Stored Charge, Majority Carrier Conduction Mectmical Charactelistics : .
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employing the Schottky Barrier principle in a large area melal-to-siJicon diode. State-of-the-art geometry features epitaxial construction with osid passivation and metal overlap contact. ideally suited for use as rectifiers in voltage, high-frequency inverters, free whelling diodes, and polarity protl diodes.
Extremely Low V.
1N5831 Datasheet
