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AQZ404 - POWER PhotoMOS RELAYS

Features

  • 3.5±0.2 .138±.008 12.5±0.2 .492±.008 21±0.2 .827±.008 www. DataSheet4U. com 1. High capacity A maximum 0.5A load can be controlled with a 5 mA input current. The ON resistance is low at 2.8Ω (typ. ) 2. 1 Form B This has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method. Cross section of the normally-closed type of power MOS  ,         , N+ P+ N+ N+ P+ N+   ,     mm inch Passivation membrane I.

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Datasheet Details

Part number AQZ404
Manufacturer Nais
File Size 108.53 KB
Description POWER PhotoMOS RELAYS
Datasheet download datasheet AQZ404 Datasheet
Additional preview pages of the AQZ404 datasheet.

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Full PDF Text Transcription

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POWER PhotoMOS RELAYS 1-channel (Form B) Type PhotoMOS RELAYS 3. Compact slim-type 4-pin SIL (W)3.5× (D)21.0× (H)12.5 mm (W).138×(D).827×(H).492 inch× The compact size of the 4-pin SIL package allows high density mounting. FEATURES 3.5±0.2 .138±.008 12.5±0.2 .492±.008 21±0.2 .827±.008 www.DataSheet4U.com 1. High capacity A maximum 0.5A load can be controlled with a 5 mA input current. The ON resistance is low at 2.8Ω (typ.) 2. 1 Form B This has been realized thanks to the builtin MOSFET processed by our proprietary method, DSD (Double-diffused and Selective Doping) method.
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