EM28C1604C3FL Datasheet | NanoAmp Solutions

Nano Amp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 .nanoamp. Advance Information Low Voltage, Extended Temperature FLASH AND SRAM BO MEMORY .. Features - - Organization: - - - - - - - - 1,048K x 16 (Flash) 256K x 16 (SRAM) Basic configuration: Flash Thirty-nine erase blocks - Eight 4K-word parameter blocks - Thirty-one 32K-word main memory blocks SRAM 4Mb SRAM for data storage - 256K-words F_VCC, VCCQ, F_VPP, S_VCC voltages 2.7V (MIN)/3.3V (MAX) F_VCC read voltage 2.7V (MIN)/3.3V (MAX) S_VCC read voltage 2.2V (MIN)/3.3V (MAX) VCCQ 1.8V (TYP) F_VPP (in-system PROGRAM/ERASE) 12V ±5% (HV) F_VPP (production programming patibility) 1.0V (MIN) S_VCC (SRAM data retention) Asynchronous access time Flash access time: 85ns @ 3.0V F_VCC Flash access time: 90ns @ 2.7V F_VCC SRAM access time: 85ns @ 2.7V S_VCC Low power consumption Enhanced WRITE/ERASE suspend option Read/Write SRAM during program/erase of Flash 128-bit chip OTP protection register for security purposes Cross-patible mand set support PROGRAM/ERASE cycles 100,000 WRITE/ERASE cycles per block BALL ASSIGNMENT 66-Ball FBGA (Top View) 1 A B C D E F G H A11 A15 A14 A13 A12 F_Vss F_Vcc Q A16 A8 A10 A9 DQ15 S_W...