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EM28C1604C3FL - Flash and SRAM Combo Memory

Description

The EM28C1604C3FL, a combination of Flash and SRAM memory, provides a compact, low-power solution for systems where PCB real estate is at a premium.

Features

  • Organization:.
  • 1,048K x 16 (Flash) 256K x 16 (SRAM) Basic configuration: Flash Thirty-nine erase blocks.
  • Eight 4K-word parameter blocks.
  • Thirty-one 32K-word main memory blocks SRAM 4Mb SRAM for data storage.
  • 256K-words F_VCC, VCCQ, F_VPP, S_VCC voltages 2.7V (MIN)/3.3V (MAX) F_VCC read voltage 2.7V (MIN)/3.3V (MAX) S_VCC read voltage 2.2V (MIN)/3.3V (MAX) VCCQ 1.8V (.

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Datasheet Details

Part number EM28C1604C3FL
Manufacturer NanoAmp Solutions
File Size 385.03 KB
Description Flash and SRAM Combo Memory
Datasheet download datasheet EM28C1604C3FL Datasheet

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Full PDF Text Transcription

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NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM28C1604C3FL Advance Information EM28C1604C3FL Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY www.datasheet4u.com FEATURES • • Organization: • • • • • • • • 1,048K x 16 (Flash) 256K x 16 (SRAM) Basic configuration: Flash Thirty-nine erase blocks – Eight 4K-word parameter blocks – Thirty-one 32K-word main memory blocks SRAM 4Mb SRAM for data storage – 256K-words F_VCC, VCCQ, F_VPP, S_VCC voltages 2.7V (MIN)/3.3V (MAX) F_VCC read voltage 2.7V (MIN)/3.3V (MAX) S_VCC read voltage 2.2V (MIN)/3.3V (MAX) VCCQ 1.8V (TYP) F_VPP (in-system PROGRAM/ERASE) 12V ±5% (HV) F_VPP (production programming compatibility) 1.
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