EM512D16
Overview
The EM512D16 is an integrated memory device containing a low power 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The base design is the same as Nano Amp’s standard low voltage version, EM512W16. The device is fabricated using Nano Amp’s advanced CMOS process and high-speed/ultra low-power/ low-voltage circuit technology. The device pinout is patible with other standard 512K x 16 SRAMs. The device is designed such that a creative user can improve system power and performance parameters through use of it’s unique page mode operation.
FIGURE 1: Pin Configuration
1 A LB
OE A0 A1 A2 CE2
B I/O 8 U B A 3 A 4 CE1 I/O 0
C I/O 9 I/O10 A 5
A 6 I/O 1 I/O 2
D VS S I/O11 A 17 A 7 I/O 3 VCC
E VCCQ I/O12 N C A 16 I/O 4 VS S
F I/O14 I/O13 A 14 A 15 I/O 5 I/O 6
G I/O15 N C A 12 A 13 WE I/O 7
H A18 A8 A9 A10 A11 NC
48 Pin BGA (top)
Features
- Dual Voltage for Optimum Performance: Vccq
- 2.3 to 3.6 Volts Vcc
- 1.7 to 2.2 Volts
- Extended Temperature...
