Datasheet4U Logo Datasheet4U.com

M2N1G64TUH8G5F - Unbuffered DDR2 SO-DIMM

Datasheet Summary

Description

M2N1G64TUH8G5F / M2S1G64TUH8G4F / M2N2G64TU8HG5B / M2N2G64TU8HG4B are unbuffered 200-Pin Double Data Rate 2 (DDR2) Synchronous DRAM Small Outline Dual In-Line Memory Module (SO-DIMM), organized as two ranks of 128Mx64 (1GB)/256Mx64 (2GB) high-speed memory array.

Features

  • Performance: Speed Sort DIMM CAS Latency fck.
  • Clock Freqency tck.
  • Clock Cycle Data Transfer Speed PC2-5300 -3C 5 333 3 667 PC2-6400 -AC 5 400 2.5 800 MHz ns Mbps.
  • Automatic and controlled precharge commands.
  • Programmable Operation: - DIMM  Latency: 3, 4, 5 - Burst Type: Sequential or Interleave - Burst Length: 4, 8 - Operation: Burst Read and Write.
  • 13/10/2 Addressing (1GB).
  • 14/10/2 Addressing (2GB).
  • 7.8 s Max. Average.

📥 Download Datasheet

Datasheet preview – M2N1G64TUH8G5F

Datasheet Details

Part number M2N1G64TUH8G5F
Manufacturer Nanya
File Size 364.08 KB
Description Unbuffered DDR2 SO-DIMM
Datasheet download datasheet M2N1G64TUH8G5F Datasheet
Additional preview pages of the M2N1G64TUH8G5F datasheet.

📁 Similar Datasheet

  • M2N60B - N-CHANNEL MOSFET (Tianjin)
  • M2N60C - N-CHANNEL MOSFET (Tianjin)
  • M2N60F - N-CHANNEL MOSFET (Tianjin)
  • M2N60R - N-CHANNEL MOSFET (Tianjin)
  • M2N60S - N-CHANNEL MOSFET (Tianjin)
  • M2N60V - N-CHANNEL MOSFET (Tianjin)
  • M2N68-LA - Motherboard (ASUS)
  • M2N7000 - TSM2N7000 (Taiwan Semiconductor)
Other Datasheets by Nanya

Full PDF Text Transcription

Click to expand full text
M2N1G64TUH8G5F / M2S1G64TUH8G4F / M2N2G64TU8HG5B / M2N2G64TU8HG4B 1GB: 128M x 64 / 2GB: 256M x 64 PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Based on DDR2-667/800 64Mx16 (1GB)/128Mx8 (2GB) SDRAM G-Die Features • Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency tck – Clock Cycle Data Transfer Speed PC2-5300 -3C 5 333 3 667 PC2-6400 -AC 5 400 2.5 800 MHz ns Mbps • Automatic and controlled precharge commands • Programmable Operation: - DIMM  Latency: 3, 4, 5 - Burst Type: Sequential or Interleave - Burst Length: 4, 8 - Operation: Burst Read and Write • 13/10/2 Addressing (1GB) • 14/10/2 Addressing (2GB) • 7.8 s Max.
Published: |