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NT5CB512M4BN - 2Gb DDR3 SDRAM B-Die

General Description

The 2Gb Double-Data-Rate-3 (DDR3) DRAMs is a high-speed CMOS Double Data Rate32 SDRAM containing 2,147,483,648 bits.

It is internally configured as an octal-bank DRAM.

The 2Gb chip is organized as 64Mbit x 4 I/O x 8 bank, 32Mbit x 8 I/O x 8 bank or 16Mbit x 16 I/O x 8 bank device.

Key Features

  • and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and  falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V ± 0.075V and 1.35V -0.0675V/+0.1V power supply and are available in BGA packages. 1 REV 1.1 08 / 2010 2Gb DDR3 SDRAM B-Die NT5CB512M4BN / NT5CB2.

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Datasheet Details

Part number NT5CB512M4BN
Manufacturer Nanya
File Size 2.38 MB
Description 2Gb DDR3 SDRAM B-Die
Datasheet download datasheet NT5CB512M4BN Datasheet

Full PDF Text Transcription for NT5CB512M4BN (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NT5CB512M4BN. For precise diagrams, and layout, please refer to the original PDF.

2Gb DDR3 SDRAM B-Die NT5CB512M4BN / NT5CB256M8BN / NT5CB128M16BP NT5CC512M4BN / NT5CC256M8BN / NT5CC128M16BP Feature  1.5V ± 0.075V / 1.35V -0.0675V/+0....

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128M16BP Feature  1.5V ± 0.075V / 1.35V -0.0675V/+0.