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NT5SV64M4AT - (NT5SVxxMxxAT) Synchronous DRAM

This page provides the datasheet information for the NT5SV64M4AT, a member of the NT5SV16M16AT (NT5SVxxMxxAT) Synchronous DRAM family.

Datasheet Summary

Description

The NT5SV64M4AT, NT5SV32M8AT, and NT5SV16M16AT are four-bank Synchronous DRAMs organized as 16Mbit x 4 I/O x 4 Bank, 8Mbit x 8 I/O x 4 Bank, and 4Mbit x 16 I/O x 4 Bank, respectively.

Features

  • High Performance: -7K 3 CL=2 fCK tCK tAC tAC Clock Frequency Clock Cycle Clock Access Time 1 133 7.5.
  • 5.4 -75B, CL=3 133 7.5.
  • 5.4 -8B, CL=2 100 10.
  • 6 Units MHz ns ns ns Clock Access Time 2 1. Terminated load. See AC Characteristics on page 37. 2. Unterminated load. See AC Characteristics on page 37. 3. tRP = tRCD = 2 CKs.
  • Multiple Burst R.

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Datasheet preview – NT5SV64M4AT

Datasheet Details

Part number NT5SV64M4AT
Manufacturer Nanya
File Size 840.91 KB
Description (NT5SVxxMxxAT) Synchronous DRAM
Datasheet download datasheet NT5SV64M4AT Datasheet
Additional preview pages of the NT5SV64M4AT datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com NT5SV64M4AT(L) NT5SV32M8AT(L) NT5SV16M16AT(L) 256Mb Synchronous DRAM Features • High Performance: -7K 3 CL=2 fCK tCK tAC tAC Clock Frequency Clock Cycle Clock Access Time 1 133 7.5 — 5.4 -75B, CL=3 133 7.5 — 5.4 -8B, CL=2 100 10 — 6 Units MHz ns ns ns Clock Access Time 2 1. Terminated load. See AC Characteristics on page 37. 2. Unterminated load. See AC Characteristics on page 37. 3. tRP = tRCD = 2 CKs • • • • • • • • • • • • Multiple Burst Read with Single Write Option Automatic and Controlled Precharge Command Data Mask for Read/Write control (x4, x8) Dual Data Mask for byte control (x16) Auto Refresh (CBR) and Self Refresh Suspend Mode and Power Down Mode Standard Power operation 8192 refresh cycles/64ms Random Column Address every CK (1-N Rule) Single 3.
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