Datasheet Summary
NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG
512Mb DDR2 SDRAM C-Die
Features
- 1.8V ± 0.1V Power Supply Voltage
- Programmable CAS Latency: 3, 4, 5, and 6
- Programmable Additive Latency: 0, 1, 2, 3, and 4
- Write Latency = Read Latency -1
- Programmable Burst Length: 4 and 8
- Programmable Sequential / Interleave Burst
- OCD (Off-Chip Driver Impedance Adjustment)
- ODT (On-Die Termination)
- 4 bit prefetch architecture
- 1k page size for x 4 & x 8,
2k page size for x16
- Data-Strobes: Bidirectional, Differential
- 4 internal memory banks
- Strong and Weak Strength Data-Output Driver
- Auto-Refresh and Self-Refresh
- Power Saving Power-Down modes
- 7.8 µs max. Average Periodic Refresh...