National Semiconductor 2N5359
The 2N5358 thru 2N5360 series of N-channel JFETs is characterized for general purpose audio and RF amplifiers requiring tightly specified IdSS ranges.GENERAL DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(25°o Gate-Drain or Gate-Source Voltage Gate Current Total Device Dissipation (25°C Free-Air Temperature) Power Derating (to +1 75°C) Storage Temperature Range Operating Temperature Range Lead Temperature (1/16" from case for 10 seconds) -40V 10 mA 300 mW 2 mW/°C -65°C to+200°C -65°Cto+175°C 300° C TO-72 0.175-0.195 (4.445-4.953) SEATING PLANE 0.209 D230 5.8«) 0.170 -0210 (4.318 -5J34) i 0.D16-0.Q19 (0 .406-0.483) T 11 y● u D 0. . 0.03Q MAX 1 0.500 | (12.70) » MIN - 0050 (U7D) 100 """ f2~. 540) v T — (s'© — -0 ^N 3 I 45- y 0.036-0.046 \y V' (0.914-1. 168) .' -^0.028-0 04B ^ 0711-1 zisi "V PIN FET 1 S 2 D 3 Q 4 Case