2N5546 Overview
Key Specifications
Description
The 2N5545 thru 2N5547 series of monolithic dual JFETs is designed for low to medium frequency differential amplifiers requiring matched gate-source voltage, high common-mode rejection, and low output conduc- tance. Gate-Drain or Gate-Source Voltage Gate Current -50V 30 mA Device Dissipation (Each Side), Ta = 25°C (Derate 1.67mW/°C) 250 mW Total Device Dissipation, Ta = 25 C (Derate 2.67 mW/°C) 400 mW Storage Temperature Range -65°C to +200 C Lead Temperature (1/16" from case for 10 seconds) 300° C TO-71 Q.2D9- 0.230 ""*" 1(5-309- 5.8421 0175 0.195 !
