2N5565 - N-Channel Monolithic Dual JFET

National Semiconductor (now Texas Instruments)

Download the 2N5565 datasheet PDF. This datasheet also covers the 2N5564 variant, as both devices belong to the same n-channel monolithic dual jfet family and are provided as variant models within a single manufacturer datasheet.

General Description

matched moderate ON resistance analog switches.

📥 Download Datasheet

2N5565 n-channel monolithic dual jfet by National Semiconductor (now Texas Instruments) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2N5564-NationalSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2N5565
Manufacturer	National Semiconductor (now Texas Instruments)
File Size	32.88 KB
Description	N-Channel Monolithic Dual JFET
Datasheet	2N5565 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2N5565	Matched N-Channel JFET	Vishay Siliconix
2N5565	dual n-channel JFET	Siliconix
2N5560	NPN Transistor	SSDI
2N5564	Matched N-Channel JFET	Vishay Siliconix
2N5564	dual n-channel JFET	Siliconix

Other Datasheets by National Semiconductor (now Texas Instruments)

Part Number	Description
2N5564	N-Channel Monolithic Dual JFET
2N5566	N-Channel Monolithic Dual JFET
2N5515	N-Channel Monolithic Dual JFET
2N5516	N-Channel Monolithic Dual JFET
2N5517	N-Channel Monolithic Dual JFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

CO 10 Q o. w CO 10 QCO Qz. CO 10 CO Q Q. CO CO lO zlO CM IO CO IO zIO CM Tf CO 10 zIO CM Process 96 2N5564-66/NPD5564-66 N-Channel Monolithic Dual JFETs General Description The 2N/NPD5564 thru 2N/NPD5566 series of N-channel monolithic dual JFETs is designed for broadband low noise differential amplifier or applications requiring dual matched moderate ON resistance analog switches. Absolute Maximum Ratings (25°o Gate-to-Gate Voltage ±40V Gate-Drain or Gate-Source Voltage -40V Gate Current 50 m A Device Dissipation (Each Side), Ta = 25°C (Derate 2.2 mW/°C) 325 mW Total Device Dissipation, Ta = 25°C (Derate 3.