GENERAL DESCRIPTION
Dual JFETs TO-99 ABSOLUTE MAXIMUM RATINGS
(25°o Gate-to-Gate Voltage ±40V Gate-Drain or Gate-Source Voltage -40V Gate Current 10 mA Device Dissipation (Each Side), Ta = 25°C (Derate 3 mW/°C) 367 mW Total Device Dissipation, Ta = 25°C (Derate 4 mW/°C) 500 mW Storage Temperature Range -65°C to +200°C Lead Temperature (1/16" from case for 10 seconds) 300° C PIN FET 1 S 2 D 3 G 4 Case 5 S 6 D 7 G 8 Sub ELECTRICAL CHARACTERISTICS
(25°C unless otherwise noted) PARAMETER CONDITIONS IGSS „ v GS(off) VGS lG Gate Reverse Currem Gale-Source Bfeakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voftage Gate Operating Current VGS = -20V. V DS = -G = -1pA,V DS =0 Vqs= 10V, Dl = 1 nA VDG = 10V, Dt = 30 ^A 'OSS 9fs 9os „ _ 9os NF Saturation Drain Current Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Forward Transconductance Common-Source Output Conductance Equivalen...
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