GENERAL DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(25°o Reverse Gate-Drain or Gate-Source Voltage Gate Current 30V 10 mA Total Device Dissipation at 25°C Case Temperature (Derate 2.88 mW/°C) 360 mW Total Device Dissipation at 25°C Lead Temperature (Derate 4 mW/°C) 500 mW Storage Temperature Range ~65°C to +150 C Lead Temperature (1/16" from case for 10 seconds) 260 C rj.i75-o.ia5 (<U45-4.699I u.ui n-u.u ii (0.406-0.4831 DIA HOLE (TVP) — p. i-i "~ 0.594 i(-15.088)" (1.143-1.397) 0.045-0.055 (l7t43^U97) PIN FET 1 S 2 D 3 G 0.003-1 1 j 5° (TVP) , (1.143- 1.397) ELECTRICAL CHARACTERISTICS
(25°c unless otherwise noted) PARAMETER 6VQSS Vqs loss rds|0 "' 9fs R " |Y °=> Re|Y h' Re (1 Y;lcs ) ' C,ss Crss NF 6,1 Gate-Source Breakdown ., Vol|ttage VQS" 15V,V DS = Gl - -1 /-(A, V DS - T A = 100'C Gate-Source Cutoff Voltage Gate Source Voltage V D s - 15V, Id = 100 ii V DS - 15V mA Dl = 1.2 In- 1 mA lO -0.7 mA mA Di = 0.4 In = 0-25 mA Saturation Drain _ Current V D S= 1BV, VQS" 0, (Note 1) Drain-Source...
National Semiconductor