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AM2009C - 6-Channel MOS Multiplex Switches

Download the AM2009C datasheet PDF. This datasheet also covers the AM2009 variant, as both devices belong to the same 6-channel mos multiplex switches family and are provided as variant models within a single manufacturer datasheet.

General Description

silicon chip using low threshold P-channel MOS process.

by a diode circuit.

Key Features

  • Typical low "on" resistance Typical low "off" leakage Typical large analog voltage range Zero inherent offset voltage Normally off with zero gate voltage 150S2 100 pA ±10V The AM2009/AM2009C/MM4504/MM5504 are de- signed for.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AM2009-NationalSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by National Semiconductor (now Texas Instruments)

Part Number Description
AM2009 six channel MOS multiplex switches
AM281 Monolithic N-Channel Junction FET Switches
AM282 Monolithic N-Channel Junction FET Switches
AM284 Monolithic N-Channel Junction FET Switches
AM285 Monolithic N-Channel Junction FET Switches

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
a AM2009/AM2009C, MM4504/MM5504 6-Channel MOS Multiplex Switches General Description The AM2009/AM2009C/MM4504/MM5504 are six channel multiplex switches constructed on a single silicon chip using low threshold P-channel MOS process. The gate of each MOS device is protected by a diode circuit. Features Typical low "on" resistance Typical low "off" leakage Typical large analog voltage range Zero inherent offset voltage Normally off with zero gate voltage 150S2 100 pA ±10V The AM2009/AM2009C/MM4504/MM5504 are de- signed for applications such as time division multiplexing of analog or digital signals. Switching speeds are primarly determined by conditions external to the device such as signal source impedance, capacitive loading and the total number of channels used in parallel.