AM281
Description
These devices bine N-channel junction FETs and bipolar transistors on a single chip for the first time in a new N-channel Bi-FET process.
This technology provides the industry's only low "ON" resistance, high speed, monolithic N-channel junction
FET analog switch. Unique circuit techniques are employed to achieve break-before-make switching action and constant "ON" resistance over the analog voltage range. The switch can block 20V peak-to-peak signals, and because of the driver design, an "OFF" isolation greater than 60 d B is achieved at 10 MHz.
Features
Interfaces with standard DTL, TTL and CMOS
Constant "ON" resistance with signals to i10V
00 "ON" resistance match 2 i~l typ
"OFF" isolation and crosstalk less than
- 60 d B at 10 MHz (typ) t ON't OFF = 105 ns/95 ns typ
Break-before-make action
Ol
Applications
A-to-D/D-to-A converters
Data acquisition
Signal multiplexers
Sample and hold
Video switch
Schematic Diagram (Typical channe
00 o
Application Hints-...
