CLC103
Description
Features s s s s s
80MHz full-power bandwidth (20Vpp, 100Ω) 200m A output current 0.4% settling in 10ns 600V/µs slew rate 4ns rise and fall times (20V) Coaxial line driving DAC current to voltage amplifier Flash A to D Baseband and video munications Radar and IF processors
Applications s s s s s
The CLC103 is constructed using thin film resistor/bipolar transistor technology, and is available in two versions: CLC103AI CLC103AM -25°C to +85°C -55°C to +125°C 24-pin ceramic DIP 24-pin ceramic DIP, MIL-STD-883, Level B
© 1996 National Semiconductor Corporation
Printed in the U.S.A. http://.national.
CLC103 Electrical Characteristics (AV = +20, Vcc = +15V, RL = 100Ω unless specified)
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are determined from tested parameters. http://.national.
CLC103 Typical Performance Characteristics ( Av = +20, Vcc = ±15V, RL = 100W; unless...
