LF298 Datasheet | National Semiconductor

Description The LF198/LF298/LF398 are monolithic sample-and-hold circuits which utilize BI-FET technology to obtain ultra-high dc accuracy with fast acquisition of signal and low droop rate. Operating as a unity gain follower, dc gain accuracy is 0.002% typical and acquisition time is as low as 6 µs to 0.01%. A bipolar input stage is used to achieve low offset voltage and wide bandwidth. Input offset adjust is acplished with a single pin, and does not degrade input offset drift. The wide bandwidth allows the LF198 to be included inside the feedback loop of 1 MHz op amps without having stability problems. Input impedance of 1010Ω allows high source impedances to be used without degrading accuracy. P-channel junction FET’s are bined with bipolar devices in the output amplifier to give droop rates as low as 5 m V/min...