LF451 Datasheet | National Semiconductor

Description The LF451 is a low-cost high-speed JFET-input operational amplifier with an internally trimmed input offset voltage (BIFET IITM technology) The device requires a low supply current and yet maintains a large gain bandwidth product and a fast slew rate In addition well matched high voltage JFET input devices provide very low input bias and offset currents The LF451 is pin patible with the standard LM741 allowing designers to upgrade the overall performance of existing designs The LF451 may be used in such applications as high-speed integrators fast D A converters sample-and-hold circuits and many other circuits requiring low input bias current high input impedance high slew rate and wide bandwidth Features Y Y Y Y Y Y Y Y Internally trimmed offset voltage 5 0 m V (max) Low input bias current 50 p A (typ) Low input noise current 0 01 p A 0Hz (typ) Wide gain bandwidth 4 MHz (typ) High slew rate 13 V ms (typ) Low supply current 3 4 m A (max) High input impedance 1012X (typ) k 0 02% (typ) Low total harmonic distortion AV e 10 RL e 10k VO e 20 Vp- p f e 20 Hz - 20 k Hz Low 1 f noise corner 50 Hz (typ) Fast settling time to 0 01% 2 ms (typ) Connection Diagram S O Package Typical Connection TL H 9660 - 2 Top View Order Number LF451CM See NS Package Number M08A TL H 9660 - 1 Simplified Schematic TL H 9660 - 3 BI-FETTM is a trademark of National Semiconductor Corporation C1995 National Semiconductor Corporation TL H 9660 RRD-B30M125 Printed in U S A Absolute Maximum Ratings (Note 1) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage (V a b Vb) Input Voltage Range Differential Input Voltage (Note 2) Junction Temperature (TJ MAX) Output Short Circuit Duration Power Dissipation (Note 3) Vb 36V s VIN s V a g 30V 150 C Continuous 500 m W ESD Tolerance Soldering Information (Note 5) SO Package Vapor Phase (60 sec) Infrared (15 sec) TBD 215 C...