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LH2011B - Dual Operational Amplifiers

Download the LH2011B datasheet PDF. This datasheet also covers the LH2011 variant, as both devices belong to the same dual operational amplifiers family and are provided as variant models within a single manufacturer datasheet.

General Description

CI :J: I The LH2011 series of dual operational amplifiers contain a pair of LM11 op amps in a single hermetic package, com- The LH2011 is internally compensated, but external compensation may be added for improved frequency stability, bining the best

Key Features

  • of existing bipolar and FET op particularly with capacitive loads. . Offset voltage bal- amps. The LH2011 is similar to the LH2108A, except that ancing is also provided, with the balance range determined input currents have been reduced by more than a factor of by a low-resistance potentiometer. ten. Offset voltage and drift have also been improved. Otherwise, the device is the electrical equivalent of the LH2108, except that the negative common-mode limit is Compared to FETs, the device pr.

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Note: The manufacturer provides a single datasheet file (LH2011_NationalSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
o T"'" oT"'" CI :J: ~National ~ Semiconductor ....I iii T"'" oT"'" LH2011/LH2011 B/LH2011 C Dual Operational Amplifiers CI -:J: ..J T"'" oT"'" General Description CI :J: ....I The LH2011 series of dual operational amplifiers contain a pair of LM11 op amps in a single hermetic package, com- The LH2011 is internally compensated, but external compensation may be added for improved frequency stability, bining the best features of existing bipolar and FET op particularly with capacitive loads.. Offset voltage bal- amps. The LH2011 is similar to the LH2108A, except that ancing is also provided, with the balance range determined input currents have been reduced by more than a factor of by a low-resistance potentiometer. ten. Offset voltage and drift have also been improved.