National Semiconductor LM3086
LM3086 is isolated from the substrate by an integral diode The substrate (terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action J 2 Electrical Characteristics (Continued) Parameter Low Frequency Noise Figure (NF) Conditions f e 1 kHz VCE e 3V IC e 100 mA RS e 1 kX f e 1 kHz VCE e 3V IC e 1 mA Min Typ 3 25 Max Units dB LOW FREQUENCY SMALL SIGNAL EQUIVALENT CIRCUIT CHARACTERISTICS Forward Current Transfer Ratio (hf| Part No. | LM3086 |
|---|---|
| Datasheet | LM3086 Download |
| Manufacturer |  National Semiconductor |
| Description | Transistor Arrays |
| Buy | Stock & Price |
GENERAL DESCRIPTION
The LM3045 LM3046 and LM3086 each consist of five general purpose silicon NPN transistors on a common monolithic substrate Two of the transistors are internally connected to form a differentially-connected pair The transistors are well suited to a wide variety of applications in low power system in the DC through VHF range They may be used as discrete transistors in conventional circuits however in addition they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching The LM3045 is supplied in a 14-lead cavity dualin-line package rated for operation over the full military temperature range The LM3046 and LM3086 are electrically identical to the LM3045 but are supplied in a 14-lead molded dual-in-line package for applications requiring only a limited temperature rangeFEATURES
Y Y Y Y Y Y Two matched pairs of transistors VBE matched g 5 mV Input offset current 2 mA max at IC e 1 mA Five general purpose monolithic tr...
