LM3146 Datasheet | National Semiconductor

Description The LM3146 consists of five high voltage general purpose silicon NPN transistors on a mon monolithic substrate Two of the transistors are internally connected to form a differentially-connected pair The transistors are well suited to a wide variety of applications in low power system in the dc through VHF range They may be used as discrete transistors in conventional circuits however in addition they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching The LM3146 is supplied in a 14-lead molded dual-in-line package for applications requiring only a limited temperature range Features Y Y Y Y Y High voltage matched pairs of transistors VBE matched g 5 m V input offset current 2 m A max at IC e 1 m A Five general purpose monolithic transistors Operation from dc to 120 MHz Wide operating current range Low noise figure 3 2 d B typ at 1 k Hz Applications General use in all types of signal processing systems operating anywhere in the frequency range from dc to VHF Custom designed differential amplifiers Temperature pensated amplifiers Connection Diagram Dual-In-Line and Small Outline Packages TL H 7959 - 1 Top View Order Number LM3146M or LM3146N See NS Package Number M14A or N14A C1995 National Semiconductor Corporation TL H 7959 RRD-B30M115 Printed in U S A Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications LM3146 Units Power Dissipation Each transistor TA e 25 C to 55 C 300 m W TA l 55 C Derate at 6 67 m W C Power Dissipation Total Package TA e 25 C 500 m W TA l 25 C Derate at 6 67 m W C Collector to Emitter Voltage VCEO 30 V 40 V Collector to Base Voltage VCBO Collector to Substrate Voltage VCIO (Note 1) 40 V Emitter to Base Voltage VEBO (Note 2) 5 V Collector to Current IC 50 m A b 40 to a 85 C Operating Temperature Range b 65 to a 150 Storage Temperature Range C...