LM6365 Datasheet | National Semiconductor

Description The LM6165 family of high-speed amplifiers exhibits an excellent speed-power product in delivering 300 V/µs and 725 MHz GBW (stable for gains as low as +25) with only 5 m A of supply current. Further power savings and application convenience are possible by taking advantage of the wide dynamic range in operating supply voltage which extends all the way down to +5V. These amplifiers are built with National’s VIP™ (Vertically Integrated PNP) process which produces fast PNP transistors that are true plements to the already fast NPN devices. This advanced junction-isolated process delivers high speed performance without the need for plex and expensive dielectric isolation. n n n n n n n High GBW product: 725 MHz Low supply current: 5 m A Fast settling: 80 ns to 0.1% Low differential gain: < 0.1% Low differential phase: < 0.1˚ Wide supply range: 4.75V to 32V Stable with unlimited capacitive load Applications n n n n Video amplifier Wide-bandwidth signal conditioning Radar Sonar Features n High slew rate: 300 V/µs Connection Diagrams 10-Lead Flatpak Top View DS009152-14 Order Number LM6165W/883 See NS Package Number W10A DS009152-8 Order Number LM6165J/883 See NS Package Number J08A Order Number LM6365M See NS Package Number M08A Order Number LM6265N or LM6365N See NS Package Number N08E VIP™ is a trademark of National Semiconductor Corporation. © 1999 National Semiconductor Corporation DS009152 .national. Connection Diagrams Military - 55˚C ≤ TA ≤ +125˚C (Continued) Package mercial 0˚C ≤ TA ≤ +70˚C LM6365N 8-Pin Molded DIP 8-Pin Ceramic DIP LM6365M 8-Pin Molded Surface Mt. 10-Lead Ceramic SOIC 10-Pin Ceramic Flatpak W10A M08A WG10A N08E J08A NSC Drawing Temperature Range Industrial - 25˚C ≤ TA ≤ +85˚C LM6265N LM6165J/883 5962-8962501PA LM6165WG/883 5962-8962501XA LM6165W883 5962-8962501HA .national. Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/...