NB212 Description
-(W) r-----------------------------------------------------------------------------, ~National D Semiconductor C'I C'I NB 211.212.213 (NPN) NB221.222.223(PNP) 500mA medium current driver transistors.
NB212 Key Features
- 35 to 65 Volt at 500 mA collector ratings
- 1.2 Watts practical power dissipation (TO-92 PLUSTM)
- 400 mV guaranteed VCE (sat) characteristics at
- Matched HFE groupings for plementary
NB212 Applications
- "Epoxy B" packaging concept for excellent reliability
- 4 to 6 Watt amplifier class A drivers