NPD5566 Datasheet PDF | National Semiconductor

National Semiconductor NPD5566

The 2N/NPD5564 thru 2N/NPD5566 series of N-channel monolithic dual JFETs is designed for broadband low noise differential amplifier or applications requiring dual matched moderate ON resistance analog switches.

Part No.	NPD5566
Datasheet	NPD5566 Download
Manufacturer	National Semiconductor
Description	N-Channel Monolithic Dual JFET
Buy	Stock & Price

GENERAL DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

(25°o Gate-to-Gate Voltage ±40V Gate-Drain or Gate-Source Voltage -40V Gate Current 50 m A Device Dissipation (Each Side), Ta = 25°C (Derate 2.2 mW/°C) 325 mW Total Device Dissipation, Ta = 25°C (Derate 3.3 mW/°C) 650 mW Storage Temperature Range -65°C to +200°C Lead Temperature (1/16" from case for 10 seconds) 300 C Innf i Molded Dual-in-Line Package (N) '
●'●●●' r.ii~i hi i ™ utlj lij l'l Mf PIN FET 1 S1 2 D1 3 G1 5 S2 6 D2 7 G2 PIN FET 1 S1 2 D1 3 IMC 4 G1 5 S2 6 D2 7 NC 8 G2

ELECTRICAL CHARACTERISTICS

(25 C unless otherwise noted) Gate-Reverse Current CONDITIONS V G S--20V,V DS = bvgss VGS(OFF) VGS(f) Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Saturation Drain Current Static Drain Source "ON" Resistance Common-Source Forward Transconductance (Note 1) Common-Source Output Conductance Common-Source Reverse Transfer Capacitance Common-Source Input Capacit Spot Noise Figure !G = -lMA, V DS = VdS= 15V, Dl = J...