PF5101 Datasheet PDF | National Semiconductor

National Semiconductor PF5101

The NF5101-3 (TO-72) and PF5101-3 (TO-92) are N-channel silicon Junction Field-Effect Transistors designed for ultra-low noise preamplifier applications, particularly hydrophones, particle detectors, high quality mic/phono/tape, video, vidicon and l-R sensor preampli- fiers.

Part No.	PF5101
Datasheet	PF5101 Download
Manufacturer	National Semiconductor
Description	N-Channel JFET
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GENERAL DESCRIPTION

ABSOLUTE MAXIMUM RATINGS

Drain-Gate Voltage Reverse Gate-Source Voltage Forward Gate Current Device Dissipation @ 25°C Derate Above 25°C Operating Temperature Range Lead Temperature (1/16" from case for 10 seconds) 40V 40V 10 mA 310 mW 2.82 mW/°C -65 to +1 50°C 300°C TO-92 0.U5-U.1B5 14.446- 4.699) i TO-72 11.170 0.195 0.209 -D.JJO >:5.309 -b.842; 0.170-0.210 i 1 ™ LEHUSTDFI ill 594 "11 10.406. ..! T 11 J. 016 0.019 '(1.400 0.413) \ 1 u 0.030 , | 0.500 m 1 I0TG2) O.QB5-0 0.U45 0.055 1.113- 1.3971 0.045--O.OS'. 5" I1YPJ 0.003 - 0.013 / '0.0T6 -0.3301 rU,~1J i 0.O4S 0.055 1.143-1.3971 0.050 ~" ~~ (2.5401 \ 0.035- .046 y V<l: ^0.028-0.048 V 10.314 'GUI * IO.7iT-1.2l9j \●

ELECTRICAL CHARACTERISTICS

PARAMETER CONDITIONS PF/NF5101 PF/NF5102 PF/NF5103 UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX BVgss Gate-Source Breakdown Gl = 1/jA, v ds = ov 40 Voltage 'gss Gate Reverse Current V GS (offi Gate-Source Cutoff Voltage V GS -- 15V, T A = 25°C V os = OV T a = 125°C V DS -- 15V,...