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TMS417409A Datasheet PDF

National Semiconductor TMS417409A

The TMS41x409A and TMS42x409A series are 16 777 216-bit dynamic random-access memory (DRAM) devices organized as 4 194 304 words of four bits each. These devices feature maximum RAS access times of 50, 60, and 70 ns. POWER SUPPLY 5V 5V 3.3 V 3.3 V SELF REFRESH, BATTERY BACKUP – – – – REFRESH CYCLES 4 096 in 64 ms 2 048 in 32 ms 4 096 in 64 ms 2 048 in 32 ms TMS416409A TMS417409A TMS426409A TMS427409A The TMS416409A and TMS417409A are offered in a 24 / 26-lead plastic surface-mount SOJ package (DJ suffix).
Part No. TMS417409A
Datasheet TMS417409A Download
Manufacturer
National Semiconductor
Description 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES
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TMS417409A datasheet page 1 preview
TMS416409A, TMS417409A, TMS426409A, TMS427409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMKS893B – AUGUST 1996 – REVISED APRIL 1997 D D D This data sheet is applicable to all TMS41x409As and TMS42x409As symbolized by Revision “B”, Revision “E”, and subsequent revisions as described in the device symbolization section. Organization . . . 4 194 304 × 4 Single Power Supply (5 V or 3.3 V) Performance Ranges: ACCESS ACCESS ACCESS TIME TIME TIME tRAC tCAC tAA MAX MAX MAX 50 ns 13 ns 25 ns 60 ns 15 ns 30 ns 70 ns 18 ns 35 ns 50 ns 13 ns 25 ns 60 ns 15 ns 30 ns 70 ns 18 ns 35 ns EDO CYCLE tHPC MIN 20 ns 25 ns 30 ns 20 ns 25 ns 30 ns DJ/DGA PACKAGES ( TOP VIEW ) VCC DQ1 DQ2 W RAS A11† A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 8 9 10 11 12 13 26 25 24 23 22 21 19 18 17 16 15 14 VSS DQ4 DQ3 CAS OE A9 A8 A7 A6 A5 A4 VSS D D D D D ’41x409A-50 ’41x409A-60 ’41x409A-70 ’42x409A-50 ’42x409A-60 ’42x409A-70 D Extended-Data-Out (EDO) Operation CAS-Before-RAS ( CBR) Refresh Low Power Dissipa...
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