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TP5510 Datasheet PDF

National Semiconductor TP5510

The TP5510 consists of a m-law monolithic AFE device utilizing the A D and D A conversion architecture shown in Figure 1 and a serial data interface The device is fabricated using National’s advanced double-poly CMOS process (microCMOS) The A D portion of the device consists of an input gain adjust amplifier an active RC pre-filter which eliminates very high frequency noise and a switched-capacitor band-pass filter that rejects signals below 200 Hz and above 3400 Hz Also included are auto-zero circuitry and a compressing A D which samples the filtered signal and converts it to the m-law...
Part No. TP5510
Datasheet TP5510 Download
Manufacturer
National Semiconductor
Description Full Duplex Analog Front End for Consumer Applications
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TP5510 datasheet page 1 preview

APPLICATIONS

February 1997 TP5510 Full Duplex Analog Front End (AFE) for Consumer

APPLICATIONS

GENERAL DESCRIPTION

The TP5510 consists of a m-law monolithic AFE device utilizing the A D and D A conversion architecture shown in Figure 1 and a serial data interface The device is fabricated using National’s advanced double-poly CMOS process (microCMOS) The A D portion of the device consists of an input gain adjust amplifier an active RC pre-filter which eliminates very high frequency noise and a switched-capacitor band-pass filter that rejects signals below 200 Hz and above 3400 Hz Also included are auto-zero circuitry and a compressing A D which samples the filtered signal and converts it to the m-law digital format The decode portion of the device consists of an expanding D A which reconstructs the analog signal from the compressed m-law code a low-pass filter which corrects for the sin x x response of the D A output and rejects signals above 3400 Hz followed by a singleended power ampl...
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