National Semiconductor TP5510
The TP5510 consists of a m-law monolithic AFE device utilizing the A D and D A conversion architecture shown in Figure 1 and a serial data interface The device is fabricated using National’s advanced double-poly CMOS process (microCMOS) The A D portion of the device consists of an input gain adjust amplifier an active RC pre-filter which eliminates very high frequency noise and a switched-capacitor band-pass filter that rejects signals below 200 Hz and above 3400 Hz Also included are auto-zero circuitry and a compressing A D which samples the filtered signal and converts it to the m-law...APPLICATIONS
February 1997 TP5510 Full Duplex Analog Front End (AFE) for ConsumerAPPLICATIONS
GENERAL DESCRIPTION
The TP5510 consists of a m-law monolithic AFE device utilizing the A D and D A conversion architecture shown in Figure 1 and a serial data interface The device is fabricated using National’s advanced double-poly CMOS process (microCMOS) The A D portion of the device consists of an input gain adjust amplifier an active RC pre-filter which eliminates very high frequency noise and a switched-capacitor band-pass filter that rejects signals below 200 Hz and above 3400 Hz Also included are auto-zero circuitry and a compressing A D which samples the filtered signal and converts it to the m-law digital format The decode portion of the device consists of an expanding D A which reconstructs the analog signal from the compressed m-law code a low-pass filter which corrects for the sin x x response of the D A output and rejects signals above 3400 Hz followed by a singleended power ampl...