GENERAL DESCRIPTION
309-5. 842} 0.016- 0.019 * (0.406-0.483) PIN FET 1 S 2 D 3 G 0036-0.046 ) V (QT9T4- 1 . 1 BB ' 0.028-0.018 ../ (0.711-1.219! ELECTRICAL CHARACTERISTICS
(25°c unless otherwise noted) PARAMETER CONDITIONS Gate-Source Breakdown Voltage v GS -o G= l 1 uA, V DS =0 VGS(off) Gate-Source Cutoff Voltage V D S= 10V, D l - 1 nA v GS(f) Saturation Drain Current Gate-Source Forward Voltage Vqs " 'OV, Vqs " 0, (Note 1) lG ^ 10mA, V D s= Common-Gate Forward Transconductance, (Note 1 Common-Gate Output Conductance VqS " 10V, Irj - 10 mA 9fg 9ogs G P9 Drain Gate Capacitance Gate-Source Capacitance Equivalent Short-Circuit Input Noise Voltage Common-Gate Forward Transconductance Common-Gate Output Conductance Common-Gate Power Gain V DS - 10V, V GS = -10V V DS = 10V, D l - 10mA V D S" 10V, D l - 10mA f = 450 MH; f - 100 MHz Notel: Pulse test duration = 2 ms. 4-42
National Semiconductor