2N5515
2N5515 is N-Channel Monolithic Dual JFET manufactured by National Semiconductor.
Description
The 2N5515 thru 2N5524 series of N-channel monolithic dual JFETs is designed for low to medium frequency differential amplifiers requiring very low noise and high mon-mode rejection.
Absolute Maximum Ratings (25O
Gate-Drain or Gate-Source Voltage
-40V
Gate Current
50 m A
Device Dissipation (Each Side), Ta = 85°C
(Derate 2 m W/°C)
250 m W
Total Device Dissipation, T/ = 85°C
(Derate 3 m W/°C)
375 m W
Storage Temperature Range Lead Temperature (1/16" from case
-65°Cto+150°C for 10 seconds)
300° C
Dual JFETs n„
'
I mum
.016-11.1119
- "lie"- -o.4i3i ddo)
Electrical Characteristics (25° C unless otherwise noted)
PARAMETER
CONDITIONS
IGSS BV GSS v GS(off)
VGS l G
Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Gate Operating Current
V GS = -30V, V DS ^Q l G = 1 /J A, V DS = VDS- 20V, Dl = 1 n A
V D G = 20V, Dl = 200 /i A
150"C
PIN FET (12)
D1
G1
S2
D2...
