2N5906
2N5906 is N-Channel Monolithic Dual JFET manufactured by National Semiconductor.
- Part of the 2N5902 comparator family.
- Part of the 2N5902 comparator family.
Description
The 2N5902 thru 2N5909 N-channel monolithic dual
< JFETs is designed for ultra-low leakage Uq
1 p A) differential amplifier applications.
Dual
JFETs
TO-99
Absolute Maximum Ratings (25°o
Gate-to-Gate Voltage
±40V
Gate-Drain or Gate-Source Voltage
-40V
Gate Current
10 m A
Device Dissipation (Each Side), Ta = 25°C
(Derate 3 m W/°C)
367 m W
Total Device Dissipation, Ta = 25°C
(Derate 4 m W/°C)
500 m W
Storage Temperature Range
-65°C to +200°C
Lead Temperature (1/16" from case for 10 seconds)
300° C
PIN FET
Case
8 Sub
Electrical Characteristics (25°C unless otherwise noted)
PARAMETER
CONDITIONS
IGSS „ v GS(off) VGS l G
Gate Reverse Currem
Gale-Source Bfeakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voftage
Gate Operating Current
VGS = -20V. V DS = -G = -1p A,V DS =0 Vqs= 10V, Dl = 1 n A VDG = 10V, Dt = 30 ^A
'OSS
9fs 9os
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