2N6483
2N6483 is N-Channel Monolithic Dual JFET manufactured by National Semiconductor.
Description
The 2N6483 thru 2N6485 series of N-channel monolithic dual JFETs is designed for low to medium frequency low noise differential amplifier applications requiring tight match and high mon-mode rejection.
Absolute Maximum Ratings (25°o
Gate-Drain or Gate-Source Voltage Gate Current
-50V
50 m A
Device Dissipation (Each Side), Ta = 85°C
(Derate 2.56 m W/°C)
250 m W
Total Device Dissipation, Ta = 85' (Derate 4.3 m W/°C)
500 m W
Storage Temperature Range
65° C to +200° C
Lead Temperature (1/16" from case for 10 seconds)
300°C
~" 0.175-0.195 (4.445-4.9531
SEATING PLANE
0.209 0.230 ""(5.309 5.842)
0.170-0210 14^18-5^3^)
HID IB...
0.016-0.019 "
M6 0.483) i'r
- 048 0711 1.2191
PIN FET (12)
S1
D1
G1
S2
D2
G2
Electrical Characteristics (25°c unless otherwise noted)
Iq SS BVQSS...
