AM181 Datasheet | National Semiconductor

Description These devices bine N-channel junction FETs and bipolar transistors on a single chip for the first time in a new N-channel Bi-FET process. This technology provides the industry's only low "ON" resistance, high speed, monolithic N-channel junction FET analog switch. Unique circuit techniques are employed to achieve break-before-make switching action and constant "ON" resistance over the analog voltage range. The switch can block 20V peak-to-peak signals, and because of the driver design, an "OFF" isolation greater than 60 d B is achieved at 10 MHz. Features Interfaces with standard DTL, TTL and CMOS Constant "ON" resistance with signals to i10V 00 "ON" resistance match 2 i~l typ "OFF" isolation and crosstalk less than - 60 d B at 10 MHz (typ) t ON't OFF = 105 ns/95 ns typ Break-before-make action Ol Applications A-to-D/D-to-A converters Data acquisition Signal multiplexers Sample and hold Video switch Schematic Diagram (Typical channe 00 o Application Hints- Vcc Positive Supply Voltage (VI + 15" +10 +12 Negative Supply Voltage (V) -15 -20 -12 v L Logic Supply Voltage (V) +5 +5 +5 V|N v R Logic...