DS2003 Datasheet | National Semiconductor

Description The DS2003 is prised of seven high voltage, high current NPN Darlington transistor pairs. All units feature mon emitter, open collector outputs. To maximize their effectiveness, these units contain suppression diodes for inductive loads and appropriate emitter base resistors for leakage. The DS2003 has a series base resistor to each Darlington pair, thus allowing operation directly with TTL or CMOS operating at supply voltages of 5.0V. The DS2003 offers solutions to a great many interface needs, including solenoids, relays, lamps, small motors, and LEDs. Applications requiring sink currents beyond the capability of a single output may be acmodated by paralleling the outputs. Features n n n n n n Seven high gain Darlington pairs High output voltage (VCE = 50V) High output current (IC = 350 m A) TTL, PMOS, CMOS patible Suppression diodes for inductive loads Extended temperature range Connection Diagram 16-Lead DIP DS009647-1 Top View Order Numbers N Package Number N16E DS2003TN DS2003CN M Package Number M16A DS2003TM DS2003CM © 2000 National Semiconductor Corporation DS009647 .national. Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Storage Temperature Range Operating Temperature Range DS2003TN, DS2003TM DS2003CN, DS2003CM Lead Temperature Soldering, 10 seconds Maximum Power Dissipation- at TA = 25˚C - 65˚C to +150˚C - 40˚C to +105˚C 0˚C to +85˚C 265˚C N16E Package M16A Package Input Voltage Output Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current 1330 m W 770 m W 30V 55V 6.0V 500 m A 25 m A Note: - Derate N16E package 13.3 m W/˚C for TA above 25˚C. Derate M16A package 7.7 m W/˚C for TA above 25˚C. Electrical Characteristics TA = 25˚C, unless otherwise specified (Note 2) Symbol ICEX Parameter Output Leakage Current Collector-Emitter Saturation Voltage Input Current...