DS3628 Datasheet | National Semiconductor

Description The DS1628 DS3628 are octal Schottky memory drivers with TRI-STATE outputs designed to drive high capacitive loads associated with MOS memory systems The drivers’ output (VOH) is specified at 3 4V to provide additional noise immunity required by MOS inputs A PNP input structure is employed to minimize input currents The circuit employs Schottky-clamped transistors for high speed A NOR gate of two inputs DIS1 and DIS2 controls the TRI-STATE mode Features High speed capabilities Typical 5 ns driving 50 p F 8 ns driving 500 p F TRI-STATE outputs High VOH (3 4V min) High density Eight drivers and two disable controls for TRI-STATE in a 20-pin package PNP inputs reduce DC loading on bus lines Glitch-free power up down bs ol TL F 5875- 1 (Equivalent Input Output Circuit) Truth Table DIS 1 H H X L L Disable Input Input X X X H L Output Z Z Z L H H X H L L H e high level L e low level X e don’t care Z e high impedance (off) C1995 National Semiconductor Corporation TL F 5875 DIS 2 TRI-STATE is a registered trademark of National Semiconductor Corp et Top View TL F 5875- 2 Order Number DS1628J DS3628J DS3628N See NS Package Number J20A or N20A Typical Application e Dual-In-Line Package TL F 5875 - 3 RRD-B30M115 Printed in U S A Schematic and Connection Diagrams http://.. Absolute Maximum Ratings (Note 1) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage Logical ‘‘1’’ Input Voltage Logical ‘‘0’’ Input Voltage Storage Temperature Range Maximum Power Dissipation at 25 C Cavity Package Molded Package Lead Temperature (Soldering 10 seconds) 7 0V 7 0V b 1 5V b 65 C to a 150 C Operating Conditions Supply voltage (VCC) Temperature (TA) DS1628 DS3628 Min 45 b 55 Max 55 a 125 a 70 Units V C C 1667 m W 1832 m W 300 C Derate cavity package 11 1 m W C above 25 C derate molded package 14 7 m W C above 25 C Electrical...