DS8863 Datasheet | National Semiconductor

Description The DS8863 and DS8963 are designed to be used in conjunction with MOS integrated circuits and mon-cathode LED’s in serially addressed multi-digit displays The DS8863 is an 8-digit driver Each driver is capable of sinking up to 500 m A The DS8963 is identical to the DS8863 except it is intended for operation at up to 18V Features 500 m A sink capability per driver DS8863 DS8963 MOS patibility (low input current) Low standby power High gain Darlington circuits Schematic and Connection Diagrams TL F 5839 - 1 Dual-In-Line Package TL F 5839 - 2 Top View Order Number DS8863N or DS8963N See NS Package Number N18A C1995 National Semiconductor Corporation TL F 5839 RRD-B30M105 Printed in U S A Absolute Maximum Ratings If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications DS8863 Input Voltage Range (Note 1) Collector (Output) Voltage (Note 2) Collector (Output)-to-Input Voltage Emitter-to-Ground Voltage (VI t 5V) Emitter-to-Input Voltage Voltage at VSS Terminal With Respect to Any Other Device Terminal b 5V to VSS DS8863 Collector (Output) Current Each Collector (Output) All Collectors (Output) Continuous Total Dissipation Operating Temperature Range Storage Temperature Range Maximum Power Dissipation at 25 C Molded Package Lead Temperature (Soldering 4 sec ) 500 m A 600 m A 800 m W 0 C to a 70 C DS8963 500 m A 600 m A 800 m W 0 C to a 70 C DS8963 b 5V to VSS 10V 10V 18V 18V b 65 C to a 150 C 1563 m W 260 C 1563 m W 260 C 10V 18V Derate molded package 12 5 m W C above 25 C Electrical Characteristics VSS e 10V Symbol VOL Parameter Low Level Output Voltage TA e 0 C to a 70 C unless otherwise noted Conditions Min TA e 25 C Typ Max 15 16 Units V V m A m A m A m A VIN e 7V IOUT e 500 m A High Level Output Current VOH e 10V IIN e 40 m A VIN e 0 5V 250 250 2 1 II ISS Input Current at Maximum Input Voltage Current into VSS Terminal VIN e 10V...